sangdest microelectronics technical data green products data sheet n1564, rev. - ? weiqi street, airport development zone, jiangning district, nanjing, china 211113 (86) 25-87123907 ? ? fax (86) 25-87123900 ? world wide web site - http://www.sa ngdest.com.cn ? e-mail address - sales@ sangdest.com.cn ? 20SQ045-S 20SQ045-S schottky barrier rectifier applications ? dc-dc converters ? ac adapter ? high frequency rectification circuit ? bypass diodes ? photovoltaic solar cell protection schottky rectifier features: ? super-high speed & low noise switching ? low voltage drop ? this is a pb ? free device ? all smc parts are traceable to the wafer lot ? additional testing can be offered upon request mechanical dimensions: in inches/ mm r-6
sangdest microelectronics technical data green products data sheet n1564, rev. - ? weiqi street, airport development zone, jiangning district, nanjing, china 211113 (86) 25-87123907 ? ? fax (86) 25-87123900 ? world wide web site - http://www.sa ngdest.com.cn ? e-mail address - sales@ sangdest.com.cn ? 20SQ045-S marking diagram: where xxxxx is yywwl 20SQ045-S = part name ssg = ssg yy = year ww = week l = lot number cautions molding resin epoxy resin ul:94v-0 ordering information: device package shipping 20SQ045-S r-6 (pb-free) 500pcs / reel for information on tape and reel specifications, including part orientation and tape sizes, please refer to our tape and reel p ackaging specification. maximum rating: characteristics symbol conditions value unit repetitive peak reverse voltage v rrm - 45 v max. average forward current i f(av) r- load, ta=25 20 a surge(non-repetitive) forward current i fsm 8.3ms single half sine-wave 350 a
sangdest microelectronics technical data green products data sheet n1564, rev. - ? weiqi street, airport development zone, jiangning district, nanjing, china 211113 (86) 25-87123907 ? ? fax (86) 25-87123900 ? world wide web site - http://www.sa ngdest.com.cn ? e-mail address - sales@ sangdest.com.cn ? 20SQ045-S electrical characteristics ta=25 unless otherwise specified characteristics symbol conditions max. unit peak forward voltage v fm i fm =20.0a,ta=25 0.55 v i rrm1 ta=25 0.5 peak reverse current i rrm2 v rm =v rrm ta=100 50 ma r j-c between junction and case 2.2 thermal resistance(typical) r j-a between junction and ambient 45 /w thermal-mechanical specifications: characteristics symbol condition specification units max. junction temperature at reduced reverse voltage at reduced reverse voltage in dc forward mode t j v r 80%v rrm v r 50%v rrm -55 to +150 -55 to +180 -55 to +200 c max. storage temperature t stg - -55 to +150 c approximate weight wt - 2.24 g case style r-6
sangdest microelectronics technical data green products data sheet n1564, rev. - ? weiqi street, airport development zone, jiangning district, nanjing, china 211113 (86) 25-87123907 ? ? fax (86) 25-87123900 ? world wide web site - http://www.sa ngdest.com.cn ? e-mail address - sales@ sangdest.com.cn ? 20SQ045-S
sangdest microelectronics technical data green products data sheet n1564, rev. - ? weiqi street, airport development zone, jiangning district, nanjing, china 211113 (86) 25-87123907 ? ? fax (86) 25-87123900 ? world wide web site - http://www.sa ngdest.com.cn ? e-mail address - sales@ sangdest.com.cn ? 20SQ045-S disclaimer: 1- the information given herein, including the specifications and dimensions, is subject to change without prior notice to impr ove product characteristics. before ordering, purchasers are advised to c ontact the smc - sangdest microelectronics (nanjing) co., ltd sale s department for the latest version of the datasheet(s). 2- in cases where extremely high reliability is required (suc h as use in nuclear power control, aerospace and aviation, traffic equipment, medical equipment , and safety equipment) , safety should be ensur ed by using semiconductor devices that feature assured safety or by means of users? fail-safe precautions or other arrangement . 3- in no event shall smc - sangdest microelectronics (nanjing) c o., ltd be liable for any damages that may result from an accid ent or any other cause during operation of the user?s units according to the datasheet(s). smc - sangdest microelectronics (nanjing) c o., ltd assumes no responsibility for any intellectual property claims or any other problems that may result from applications of infor mation, products or circuits described in the datasheets. 4- in no event shall smc - sangdest microelectronics (nanjing) c o., ltd be liable for any failure in a semiconductor device or any secondary damage resulting from use at a value exceeding the absolute maximum rating. 5- no license is granted by the datasheet(s) under any patents or other rights of any third party or smc - sangdest microelectr onics (nanjing) co., ltd. 6- the datasheet(s) may not be reproduced or duplicated, in any form, in whole or part, without the expressed written permissio n of smc - sangdest microelectronics (nanjing) co., ltd. 7- the products (technologies) described in the datasheet(s) are not to be provided to any party whose purpose in their applica tion will hinder maintenance of international peace and safety nor are they to be applied to that purpose by their direct purchasers or a ny third party. when exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws a nd regulations..
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